Optoelectronic assembly and method for producing an optoelectronic assembly

ABSTRACT

An optoelectronic assembly comprising an optoelectronic component, which comprises a specularly reflective surface and comprising a radiation cooler in direct physical contact with the optoelectronic component. The radiation cooler is arranged above the specularly reflective surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 16/070,534, filed Jul. 17, 2018, allowed, which application isa national stage entry according to 35 U.S.C. § 371 of PCT applicationNo.: PCT/EP2017/051993 filed on Jan. 31, 2017, which claims priorityfrom German Patent Application Serial No.: 10 2016 101 788.4 which wasfiled Feb. 2, 2016, and is incorporated herein by reference in itsentirety and for all purposes.

TECHNICAL FIELD

The disclosure relates to an optoelectronic assembly and to a method forproducing an optoelectronic assembly.

SUMMARY OF THE INVENTION

An optoelectronic assembly may include one, two or more optoelectroniccomponents. An optoelectronic component may be an electromagneticradiation emitting component or an electromagnetic radiation absorbingcomponent. An electromagnetic radiation absorbing component may be asolar cell, as a non-limiting example. An electromagnetic radiationemitting component may be, as a non-limiting example, a light emittingdiode, a light emitting transistor, an organic light emitting diode oran organic light emitting transistor. Optoelectronic components on anorganic basis, so-called organic optoelectronic components, are findingincreasingly widespread application. By way of a non-limitingembodiment, organic light emitting diodes (OLEDs) are increasinglymaking inroads in general lighting, as a non-limiting example, assurface light sources, and in automotive applications, as a non-limitingexample, as rear lights, brake lights, flashing indicators or interiorlighting.

An organic optoelectronic component, as a non-limiting example, an OLED,may include an anode and a cathode and an organic functional layersystem therebetween. The organic functional layer system may include oneor more emitter layers in which electromagnetic radiation is generated,a charge generating layer structure including in each case two or morecharge generating layers (CGLs) for charge generation, and one or moreelectron blocking layers, also referred to as hole transport layers(HTLs), and one or more hole blocking layers, also referred to aselectron transport layers (ETLs), in order to direct the current flow.

The operating lifetime of OLEDs is generally temperature-dependent and,in the range of room temperature to approximately 85° C., decreasesapproximately by a factor of two to three per 25 K temperature increase.The exact dependence is dependent on many properties, such as the exactlayer construction, as a non-limiting example. Above approximately 100°C. the aging is additionally accelerated, and at temperatures of aboveapproximately 120° C. to 130° C. a spontaneous irreversible failure mayeven be observed within minutes.

In this case, aging as a result of the operation of an OLED at aconstant current density is manifested by a rise in voltage and a fallin luminance. Aging as a result of storage, during which the OLED is notoperated, is manifested primarily by a rise in voltage. A fall inluminance may also occur here, but is generally of secondary importance.

The crucial temperature for the aging of the OLED both during operationand during storage is the temperature of the OLED which is composedadditively of the ambient temperature basically present and the inherentheating that occurs during operation. For estimating the inherentheating it is possible to establish a balance:

P_ges=P_heat−P_cool;

where P_ges is the thermal power that leads to a temperature change,P_heat is the heat input of the OLED itself, and P_cool is the powerthat is dissipated by various cooling mechanisms, wherein the followingholds true:

P_heat=j*U*A(1−WPE);

where j is the current density, U is the voltage, A is the luminous areaand WPE is the wall plug efficiency of the OLED.

The operating lifetime of the OLED at a predefined ambient temperaturemay be increased by optimizing the organic layer stack and theencapsulation. Furthermore, attempts are made to minimize the sourceterm P_heat by means of particularly efficient OLEDs. This may have theeffect that the OLED is constructed in a particularly complex fashionand/or is producible with a particularly high outlay.

Besides these endeavors, which concern the OLED itself, the OLED mayalso be actively cooled. That is to say that the term P_cool may beactively increased, as a non-limiting example, by means of a Peltierelement, by means of forced convection, as a non-limiting example, bymeans of a fan, or by means of cooling with a cooling liquid, as anon-limiting example, by means of water cooling. This may have theeffect that the optoelectronic assembly including the correspondingilluminant and the corresponding cooling element is formed in aparticularly large and/or complex fashion and/or that the optoelectronicassembly is producible with a particularly high outlay.

Even if the OLED is not actively cooled, nevertheless the term P_cool isnot equal to zero, since the OLED, like any other body, permanentlyemits thermal radiation, an equilibrium with the ambient temperaturebeing established here.

Radiation coolers have recently become known from the technical field ofbuilding cooling. A radiation cooler of this type has the property thatit emits more heat via thermal radiation than it takes up via thermalradiation, with the result that a temperature that is less than theambient temperature is established in the radiation cooler.

FIG. 1 shows a building cooler 100. The building cooler 100 includes aframe 102, including at the top side thereof a cutout, which is coveredby a membrane 104 and below which a trough 106 is arranged. The membrane104 is formed by low density polyethylene. An upper surface of the frame102 that is not covered by the membrane 104 is covered with aluminizedMylar. The trough 106 includes a cutout, in which a plastics body 108 isarranged, at the top side of which a conventional radiation cooler 110is arranged. The trough 106 includes clear acrylic. The frame 102 isformed by wood. The plastics body 108 includes polystyrene. The trough106, the plastics body 108 and the membrane 104 enclose a closed airpocket. An outer surface of the plastics body 108 that is not covered bythe conventional radiation cooler 110 is coated with aluminized Mylar.

The building cooler 100 is arranged on a roof (not illustrated) of abuilding (not illustrated) and is thermally connected to a coolingsystem (not illustrated) extending in the building. The building cooler100 shown is optimized toward minimizing cooling by thermal conductionand convection, in order that the cooling effect is substantiallyrestricted to radiative cooling. The building cooler 100 is arrangedsuch that the sunlight impinges on the surface at right angles.

FIG. 2 shows a detailed sectional illustration of the conventionalradiation cooler 110. The conventional radiation cooler 110 includes abase body 112 formed by silicon, an adhesion layer 113 formed on thebase body 112 and formed by titanium, a mirror layer 114 formed on theadhesion layer 113 and formed by silver, and a cooling layer structureformed on the mirror layer 114. The cooling layer structure includes aplurality of layers stacked one above another. The layers are formedalternately by silicon dioxide and hafnium oxide. The different layershave different refractive indices and different thicknesses. In thiscase, the cooling layer structure includes at least a first thicknessregion 116, in which the individual layers have thicknesses of between100 nm and 1000 nm, and a second thickness region 118, in which theindividual layers have thicknesses of between 10 and 100 nm. The secondthickness region 118 is formed above the mirror layer 114 and the firstthickness region 116 is formed above the second thickness region 118.The adhesion layer 113 may optionally be dispensed with.

The layers are optimized toward reflecting sunlight and at the same timemaximizing the emissivity in the range of 8 μm to 13 μm. To that end,the “Needle Optimization Technique” may be used, with the boundaryconditions of a layer sequence of SiO2 (low refractive index) and HfO2(high refractive index). The cooling principle is based on a combinationof material properties, such as, as a non-limiting example, theemissivity, and interference effects.

A thorough illustration of the conventional radiation cooler 110, thefunctioning thereof and the physical principles may be found in theletter or technical article “Passive radiative cooling below ambient airtemperature under direct sunlight”, by Aaswath P. Raman et al., printedon page 540 et seq., of the physical journal Nature, Volume 515, fromNov. 27, 2014.

The diagrams shown in FIGS. 4 to 6 were plotted with the building cooler100 shown in FIG. 1 and with the conventional radiation cooler 110explained with reference to FIG. 2.

FIG. 3 shows an absorption spectrum 82 of the conventional radiationcooler 110 as a solid line and an emission spectrum 80 of the sun as anarea in a first diagram, in which the emission/absorption EM/ABnormalized to one is represented as a function of the wavelength LAM ofthe electromagnetic radiation. The first diagram reveals that theconventional radiation cooler 110 absorbs only extremely littleelectromagnetic radiation in the significant range of the solarspectrum, which means that even under direct insolation the conventionalradiation cooler 110 heats up only relatively little compared with aconventional body, as a non-limiting example, an aluminum body or ablack body.

FIG. 4 shows an emission spectrum 86 of the radiation cooler 110 as asolid line and a transmissivity 84 of the atmosphere as an area in asecond diagram, in which the emission/absorption EM/AB normalized to oneis represented as a function of the wavelength LAM of theelectromagnetic radiation. The second diagram reveals that theconventional radiation cooler 110 emits electromagnetic radiationsubstantially in a wavelength range in which the atmosphere is largelytransmissive.

The properties—illustrated by the first and second diagrams—of theconventional radiation cooler 110 and in particular the cooling layerstructure thereof in interaction with the mirror layer 114 have theeffect that even under direct insolation the temperature of theconventional radiation cooler 110 is fundamentally lower than theambient temperature. In particular, the conventional radiation cooler110 may decrease to a temperature that is lower than the ambienttemperature by 5° C.

FIG. 5 shows a third diagram, in which the temperature T is plotted onthe left-hand Y-axis and the irradiance SI of the sun is plotted on theright-hand Y-axis, both variables being represented as a function of thetime of day TIME in the third diagram. In the third diagram, the topmostalmost straight and arcuate line shows the emitted solar energy 90,which attains a maximum approximately at midday. The ambient temperature92 is plotted directly underneath, which rises during the course of theday from 10° C. to approximately 17.5° C. after 14:00. The bottommostline shows the temperature 94 of the conventional radiation cooler 110,which rises from approximately 7.5° C. at around 10:00 in the morning toa maximum of approximately 12.5° between 13:00 and 14:00. It may be seenhere that the temperature 94 of the conventional radiation cooler 110 isalways significantly below the ambient temperature 92, in particular upto 5° below the ambient temperature 92.

FIG. 6 shows a fourth diagram, in which the same dependencies as in thethird diagram are represented with regard to the variables, wherein thetopmost line again represents the irradiance 90, the line underneathrepresents a temperature 96 of black color exposed to solar radiation,the line illustrated underneath represents the temperature 98 of analuminum body exposed to the sun, the line underneath represents theambient temperature 92 and the bottommost line represents thetemperature 94 of the conventional radiation cooler 110 exposed to solarradiation. With regard to heating in direct sunlight, a conventionalOLED corresponds approximately to an aluminum body. The fourth diagramreveals that under direct insolation black color heats up to a greaterextent than aluminum, that aluminum heats up to a greater extent thanthe ambient temperature 92, and that the temperature 94 of theconventional radiation cooler 110 remains below the temperature 98 ofaluminum, or of a conventional OLED, and below the temperature 96 ofblack color and even below the ambient temperature 92.

A non-limiting object of the description is to provide an optoelectronicassembly which is constructed in a simple manner, which is compactand/or has a particularly long lifetime.

A non-limiting object of the disclosure is to provide a method forproducing an optoelectronic assembly which is implementable in a simplemanner and/or which contributes to the optoelectronic assembly beingcompact and/or having a particularly long lifetime.

A non-limiting object is achieved in accordance with one aspect of thedisclosure by means of an optoelectronic assembly, including anoptoelectronic component, which includes a specularly reflectivesurface, and including a radiation cooler, which is in direct physicalcontact with the optoelectronic component and which is arranged abovethe specularly reflective surface.

The radiation cooler has the effect that the optoelectronic component iscooled both during operation and in a state in which it is not inoperation, as a non-limiting example, during storage. On account of thiscooling, the average temperature of the optoelectronic component isreduced over its lifetime compared with an optoelectronic componentwhich is not coupled to a radiation cooler, as a result of which thelifetime increases. Consequently, the optoelectronic assembly has aparticularly long lifetime. Moreover, the radiation cooler may be formedin the form of a layer structure in or on the optoelectronic componentparticularly compactly compared with a fan or a water cooling system.Furthermore, the radiation cooler includes no moving parts, for whichreason the optoelectronic assembly overall may be constructed and/or maybe formed in a particularly simple manner.

The direct physical contact between the radiation cooler and theoptoelectronic component has the effect that heat that theoptoelectronic component takes up from the surroundings or generatesduring operation may be transported away effectively to the radiationcooler and the optoelectronic component may thus be cooled. To put itclearly, the cooling of the optoelectronic component, as a non-limitingexample, of an OLED, is improved by the amplification of the passivecooling naturally present by optimized radiative cooling by comparisonwith an optoelectronic assembly without a radiation cooler. Through theuse of a layer stack optimized toward that, as a non-limiting example,the cooling power P_cool mentioned in the introduction is significantlyincreased by comparison with a conventional OLED.

The improvement in the passive cooling of the OLED brings about anincrease in the operating lifetime and the storage stability of the OLEDfor a given ambient temperature and/or a reduction of the rise involtage for a predefined time and ambient temperature, which leads to alower thermal power of the OLED (P_heat) at a predefined time, and/or anincrease in the temperature use range of the OLED toward higher ambienttemperatures.

The radiation cooler is thus arranged above the specularly reflectivesurface and the optoelectronic component is formed such thatelectromagnetic radiation incident on the radiation cooler from outsidepenetrates through said radiation cooler and impinges on the specularlyreflective surface and is reflected by the latter, such that theelectromagnetic radiation is emitted from the specularly reflectivesurface back through the radiation cooler toward the outside. Theradiation cooler may be the conventional radiation body described in theintroduction and illustrated in the letter or technical article “Passiveradiative cooling below ambient air temperature under direct sunlight”,by Aaswath P. Raman et al., printed on page 540 et seq., in the physicaljournal Nature, Volume 515, from Nov. 27, 2014, or may be formed atleast identically or similarly thereto. In particular, the radiationbody may include the same cooling layer structure as the conventionalradiation cooler.

In accordance with one development, the radiation cooler is arranged onthe exterior of the optoelectronic component. This makes it possible toform the optoelectronic component and the radiation cooler independentlyof one another. Alternatively or additionally, this makes it possiblethat the radiation cooler may be secured to the optoelectronic componentin a simple manner.

In accordance with one development, the optoelectronic componentincludes a covering body, which closes off the optoelectronic componenttoward the outside, wherein the radiation cooler is arranged on thecovering body. Alternatively or additionally, the optoelectroniccomponent includes a carrier, which closes off the optoelectroniccomponent toward the outside, wherein the radiation cooler or a furtherradiation cooler is arranged on the carrier. Alternatively oradditionally, the optoelectronic component includes a heat sink, whichcloses off the optoelectronic component toward the outside, wherein theradiation cooler or a further radiation cooler is arranged on the heatsink. This contributes to the fact that the optoelectronic component maybe produced in a conventional manner and the radiation cooler may besecured on the exterior of the covering body, the carrier and/or theheat sink in a simple manner. As an alternative thereto, the radiationcooler may firstly be secured to the covering body, the carrier and/orthe heat sink or even be formed thereon and may then subsequently besecured together with the covering body, the carrier and/or the heatsink on the rest of the optoelectronic component. In the case of anOLED, this makes it possible that in the course of forming the radiationcooler it is not necessary to take account of the temperaturesensitivity of the organic functional layer structure of theoptoelectronic component.

In accordance with one development, the radiation cooler is integratedinto a layer structure of the optoelectronic component. This maycontribute to the optoelectronic assembly being constructed in aparticularly simple manner. Alternatively or additionally, this may makeit possible for the radiation cooler to perform other tasks and/orfunctions in the optoelectronic component in addition to cooling, suchas, as a non-limiting example, an increase in the coupling-out of lightand/or, in the case of an OLED, an encapsulation of the organicfunctional layer structure.

In accordance with one development, the radiation cooler is in directphysical contact with an electrode of the optoelectronic component. Ifthe corresponding electrode forms an outer surface of the optoelectroniccomponent, then the radiation cooler may be arranged on the exterior ofthe optoelectronic component, in particular of the correspondingelectrode. If the corresponding electrode forms an inner layer of theoptoelectronic component, then the radiation cooler may be integrated inthe optoelectronic component in such a way that it is in direct physicalcontact with the corresponding electrode. The direct physical contactwith the electrode may contribute to a particularly good heat transferfrom the corresponding electrode to the radiation cooler and thus to aparticularly efficient cooling of the optoelectronic assembly.

In accordance with one development, the cover glass, the carrier, theheat sink and/or the electrode include(s) or form(s) the specularlyreflective surface. In this context, it may be particularly advantageousfor the radiation cooler to be arranged on the cover glass, the carrier,the heat sink and/or the electrode including or forming the specularlyreflective surface.

In accordance with one development, the radiation cooler is formed as anencapsulation of the optoelectronic component. In particular, the layersof the radiation cooler may be formed in such a way that, in the case ofan OLED, they encapsulate the organic functional layer structure of theOLED and/or electrodes of the OLED. As a result, in addition to thefunction of cooling, the radiation cooler acquires a further function,namely that of the encapsulation of the optoelectronic component. Thishas the effect that an encapsulation structure provided exclusively forthe encapsulation may be dispensed with, the encapsulation effect of theencapsulation structure provided exclusively for the encapsulation maybe reduced and/or the encapsulation effect may be intensified overall.This may contribute to the optoelectronic component being producible ina particularly simple and/or compact manner. The radiation cooler may beformed, as a non-limiting example, in the form of a thin filmencapsulation.

In accordance with one development, the optoelectronic component is anorganic optoelectronic component, as a non-limiting example, a solarcell or OLED. In interaction with the organic optoelectronic component,the radiation cooler may contribute particularly effectively tosignificantly lengthening the lifetime of the corresponding organicoptoelectronic component.

In accordance with one development, the radiation cooler includes alayer structure including a plurality of different layers, wherein thelayers have different refractive indices and at least partly differentlayer thicknesses, wherein in a first thickness region of the layerstructure layers are formed which have thicknesses which are greaterthan the thicknesses of layers in a second thickness region. The layershaving the different refractive indices and the different thicknessregions have the effect that the radiation cooler cools down relative tothe ambient temperature even under direct insolation.

In accordance with one development, the thicknesses in the firstthickness region are in a range of 100 to 1000 nm and/or the thicknessesin the second thickness region are in a range of 1 to 100 nm.

In accordance with one development, the layers in part include or areformed by silicon dioxide and in part include or are formed by hafniumoxide or titanium dioxide.

A non-limiting object is achieved in accordance with one aspect of thedisclosure by means of a method for producing an optoelectronicassembly, wherein the optoelectronic component, which includes thespecularly reflective surface, is coupled to the radiation cooler insuch a way that the latter is in direct physical contact with theoptoelectronic component and is arranged above the specularly reflectivesurface.

The advantages and developments of the optoelectronic assembly aspresented above may readily be applied to the method for producing theoptoelectronic assembly. Therefore, at this juncture, a renewedpresentation of the corresponding advantages and developments isdispensed with and reference is made to the above passages of text.

In accordance with one development, firstly the cover glass, the carrieror the heat sink of the optoelectronic component is coupled to theradiation cooler and then the cover glass, the carrier or the heat sink,respectively, with the radiation cooler is coupled to the rest of theoptoelectronic component. In order to couple the radiation cooler to thecover glass, the carrier or the heat sink, the completed radiationcooler may be simply arranged and secured on the cover glass, thecarrier or the heat sink or the layers of the radiation cooler may beformed on the cover glass, the carrier or the heat sink. In other words,the cover glass, the carrier or the heat sink may serve as a substratefor forming the cooling layer structure of the radiation cooler.

A non-limiting object is achieved in accordance with one aspect of thedisclosure by means of a use of the radiation cooler for cooling theoptoelectronic component.

The advantages and developments of the optoelectronic assembly aspresented above may readily be applied to the use of the radiationcooler for cooling the optoelectronic component. Therefore, at thisjuncture, a renewed presentation of the corresponding advantages anddevelopments is dispensed with and reference is made to the abovepassages of text.

In accordance with one development, the optoelectronic component is anOLED. The radiation cooler may be used, as a non-limiting example, as anencapsulation layer or encapsulation structure of the OLED.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. The drawings are not necessarilyto scale, emphasis instead generally being placed upon illustrating theprinciples of the disclosed embodiments. In the following description,various embodiments described with reference to the following drawingsin which:

FIG. 1 shows a sectional illustration of a building cooler,

FIG. 2 shows a detailed sectional illustration of a conventionalradiation cooler,

FIG. 3 shows a first diagram,

FIG. 4 shows a second diagram,

FIG. 5 shows a third diagram,

FIG. 6 shows a fourth diagram,

FIG. 7 shows a lateral sectional illustration of one embodiment of anoptoelectronic assembly,

FIG. 8 shows a lateral sectional illustration of one embodiment of anoptoelectronic assembly,

FIG. 9 shows a lateral sectional illustration of one embodiment of anoptoelectronic assembly,

FIG. 10 shows a lateral sectional illustration of one embodiment of anoptoelectronic assembly,

FIG. 11 shows a flow diagram of one embodiment of a method for producingan optoelectronic assembly, and

FIG. 12 shows a flow diagram of one embodiment of a method for producingan optoelectronic assembly.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form part of this description and show forillustration purposes specific embodiments in which the invention may beimplemented. Since component parts of embodiments may be positioned in anumber of different orientations, the direction terminology serves forillustration and is not restrictive in any way whatsoever. It goeswithout saying that other embodiments may be used and structural orlogical changes may be made, without departing from the scope ofprotection of the present disclosure. It goes without saying that thefeatures of the various embodiments described herein may be combinedwith one another, unless specifically indicated otherwise. Therefore,the following detailed description should not be interpreted in arestrictive sense, and the scope of protection of the present disclosureis defined by the appended claims. In the figures, identical or similarelements are provided with identical reference signs, insofar as this isexpedient.

An optoelectronic assembly includes one, two or more optoelectroniccomponents and a radiation cooler. Optionally, an optoelectronicassembly may also include one, two or more electronic components. Anelectronic component may include, as a non-limiting example, an activeand/or a passive component. An active electronic component may include,as a non-limiting example, a computing, control and/or regulating unitand/or a transistor. A passive electronic component may include, as anon-limiting example, a capacitor, a resistor, a diode or a coil.

An optoelectronic component may be an electromagnetic radiation emittingcomponent or an electromagnetic radiation absorbing component. Anelectromagnetic radiation absorbing component may be a solar cell, as anon-limiting example. In various embodiments, an electromagneticradiation emitting component may be an electromagnetic radiationemitting semiconductor component and/or can be formed as anelectromagnetic radiation emitting diode, as an organic electromagneticradiation emitting diode, as an electromagnetic radiation emittingtransistor or as an organic electromagnetic radiation emittingtransistor. The radiation can be, as a non-limiting example, light inthe visible range, UV light and/or infrared light. In this context, theelectromagnetic radiation emitting component may be formed, as anon-limiting example, as a light emitting diode (LED), as an organiclight emitting diode (OLED), as a light emitting transistor or as anorganic light emitting transistor. In various embodiments, the lightemitting component may be part of an integrated circuit. Furthermore, aplurality of light emitting components may be provided, as anon-limiting example, in a manner accommodated in a common housing.

A radiation cooler has the property that it intrinsically cools downunder the ambient temperature. A radiation cooler of this type has anabsorption spectrum and an emission spectrum for electromagneticradiation which are set in relation to one another such that theradiation cooler emits more energy in the form of electromagneticradiation than it absorbs. Therefore, the radiation cooler basicallyassumes a temperature that is below the ambient temperature, inparticular without an additional cooling system, as a non-limitingexample, without a gas, for example air, or liquid, for example water,cooling system.

FIG. 1 shows a building cooler 100 as described in the introduction.

FIG. 2 shows a conventional radiation cooler 110 as described in theintroduction.

FIG. 3 shows a first diagram as described in the introduction.

FIG. 4 shows a second diagram as described in the introduction.

FIG. 5 shows a third diagram as described in the introduction.

FIG. 6 shows a fourth diagram as described in the introduction.

FIG. 7 shows one embodiment of an optoelectronic assembly 1. Theoptoelectronic assembly 1 includes an optoelectronic component 10 and aradiation cooler 40. The radiation cooler 40 is in direct physicalcontact with the optoelectronic component 10.

The radiation cooler 40 may be the conventional radiation body 110described above and illustrated in the letter “Passive radiative coolingbelow ambient air temperature under direct sunlight”, by Aaswath P.Raman et al., printed on page 540 et seq., of the physical journalNature, Volume 515, from Nov. 27, 2014, or may be formed at leastidentically or similarly thereto. In particular, the radiation body 40may include the same cooling layer structure as the conventionalradiation cooler 110.

The optoelectronic component 10 is preferably formed as a bottomemitter. As an alternative thereto, however, the optoelectroniccomponent 10 may also be formed as a top emitter or as a component thatemits on both sides.

The optoelectronic component 10 includes a carrier 12. The carrier 12may be formed as translucent or transparent. The carrier 12 serves as acarrier element for electronic elements or layers, as a non-limitingexample, light emitting elements. The carrier 12 may include or beformed from, as a non-limiting example, plastic, metal, glass, quartzand/or a semiconductor material. Furthermore, the carrier 12 may includeor be formed from one plastics film or a laminate including one orincluding a plurality of plastics films. The carrier 12 may be formed asmechanically rigid or mechanically flexible.

An optoelectronic layer structure is formed on the carrier 12. Theoptoelectronic layer structure includes a first electrode layer 14,which includes a first contact section 16, a second contact section 18and a first electrode 20. The carrier 12 with the first electrode layer14 may also be referred to as a substrate. A first barrier layer (notillustrated), as a non-limiting example, a first barrier thin-filmlayer, may be formed between the carrier 12 and the first electrodelayer 14.

The first electrode 20 is electrically insulated from the first contactsection 16 by means of an electrical insulation barrier 21. The secondcontact section 18 is electrically coupled to the first electrode 20 ofthe optoelectronic layer structure. The first electrode 20 may be formedas an anode or as a cathode. The first electrode 20 may be formed astranslucent or transparent. The first electrode 20 includes anelectrically conductive material, as a non-limiting example, metaland/or a transparent conductive oxide (TCO) or a layer stack of aplurality of layers including metals or TCOs. The first electrode 20 mayinclude, as a non-limiting example, a layer stack of a combination of alayer of a metal on a layer of a TCO, or vice versa. One non-limitingembodiment is a silver layer applied on an indium tin oxide (ITO) layer(Ag on ITO) or ITO-Ag-ITO multilayers. As an alternative or in additionto the materials mentioned, the first electrode 20 may include: networkscomposed of metallic nanowires and nanoparticles, as a non-limitingexample, composed of Ag, networks composed of carbon nanotubes, grapheneparticles and graphene layers and/or networks composed of semiconductingnanowires.

An optically functional layer structure, as a non-limiting example, anorganic functional layer structure 22, of the optoelectronic layerstructure is formed above the first electrode 20. The organic functionallayer structure 22 may include, as a non-limiting example, one, two ormore partial layers. By way of a non-limiting embodiment, the organicfunctional layer structure 22 may include a hole injection layer, a holetransport layer, an emitter layer, an electron transport layer and/or anelectron injection layer. The hole injection layer serves for reducingthe band gap between first electrode and hole transport layer. In thecase of the hole transport layer, the hole conductivity is greater thanthe electron conductivity. The hole transport layer serves fortransporting the holes. In the case of the electron transport layer, theelectron conductivity is greater than the hole conductivity. Theelectron transport layer serves for transporting the electrons. Theelectron injection layer serves for reducing the band gap between secondelectrode and electron transport layer. Furthermore, the organicfunctional layer structure 22 may include one, two or more functionallayer structure units each including the partial layers mentioned and/orfurther intermediate layers.

A second electrode 23 of the optoelectronic layer structure is formedabove the organic functional layer structure 22, said second electrodebeing electrically coupled to the first contact section 16. The secondelectrode 23 may be formed in accordance with one of the configurationsof the first electrode 20, wherein the first electrode 20 and the secondelectrode 23 may be formed identically or differently. The firstelectrode 20 serves, as a non-limiting example, as an anode or a cathodeof the optoelectronic layer structure. The second electrode 23, in amanner corresponding to the first electrode, serves as a cathode orrespectively an anode of the optoelectronic layer structure.

The optoelectronic layer structure is an electrically and/or opticallyactive region. The active region is, as a non-limiting example, thatregion of the optoelectronic component 10 in which electric current forthe operation of the optoelectronic component 10 flows and/or in whichelectromagnetic radiation is generated or absorbed. A getter structure(not illustrated) may be arranged on or above the active region. Thegetter layer may be formed as translucent, transparent or opaque. Thegetter layer may include or be formed from a material which absorbs andbinds substances that are harmful to the active region.

An encapsulation layer 24 of the optoelectronic layer structure isformed above the second electrode 23 and in part above the first contactsection 16 and in part above the second contact section 18, andencapsulates the optoelectronic layer structure. The encapsulation layer24 may be formed as a second barrier layer, as a non-limiting example,as a second barrier thin-film layer. The encapsulation layer 24 may alsobe referred to as thin film encapsulation. The encapsulation layer 24forms a barrier vis-à-vis chemical contaminants and/or atmosphericsubstances, in particular vis-à-vis water (moisture) and oxygen. Theencapsulation layer 24 may be formed as a single layer, a layer stack ora layer structure. The encapsulation layer 24 may include or be formedfrom: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide,hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, siliconnitride, silicon oxynitride, indium tin oxide, indium zinc oxide,aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), Nylon 66,and mixtures and alloys thereof. If appropriate, the first barrier layermay be formed on the carrier 12 in a manner corresponding to aconfiguration of the encapsulation layer 24.

In the encapsulation layer 24, a first cutout of the encapsulation layer24 is formed above the first contact section 16 and a second cutout ofthe encapsulation layer 24 is formed above the second contact section18. A first contact region 32 is exposed in the first cutout of theencapsulation layer 24 and a second contact region 34 is exposed in thesecond cutout of the encapsulation layer 24. The first contact region 32serves for electrically contacting the first contact section 16 and thesecond contact region 34 serves for electrically contacting the secondcontact section 18.

An adhesion-medium layer 36 is formed above the encapsulation layer 24.The adhesion-medium layer 36 includes, as a non-limiting example, anadhesion medium, for example an adhesive, for example a laminationadhesive, a lacquer and/or a resin. The adhesion-medium layer 36 mayinclude, as a non-limiting example particles which scatterelectromagnetic radiation, for example light scattering particles.

A covering body 38 is formed above the adhesion-medium layer 36. Theadhesion-medium layer 36 serves for securing the covering body 38 to theencapsulation layer 24. The covering body 38 includes plastic, glass, asa non-limiting example, a cover glass, and/or metal, as a non-limitingexample. By way a non-limiting embodiment, the covering body 38 maysubstantially be formed from glass and include a thin metal layer, as anon-limiting example, a metal film, and/or a graphite layer, as anon-limiting example, a graphite laminate, on the glass body. Thecovering body 38 serves for protecting the optoelectronic component 10,as a non-limiting example, against mechanical force influences fromoutside. Furthermore, the covering body 38 may serve for distributingand/or dissipating heat that is generated in the optoelectroniccomponent 10. As a non-limiting embodiment, the glass of the coveringbody 38 may serve as protection against external influences and themetal layer of the covering body 38 may serve for distributing and/ordissipating the heat that arises during the operation of theoptoelectronic component 10. In other words, the covering body 38 may beformed as a heat sink. A heat sink may be formed as an alternative or inaddition to the covering body 38.

The radiation cooler 40 is arranged on the exterior of theoptoelectronic component 10. The radiation cooler 40 is secured directlyto the covering body 38 of the optoelectronic component 10. Theradiation cooler 40 is formed substantially like the conventionalradiation cooler 110 explained with reference to FIG. 2, wherein thecovering body 38 of the optoelectronic component 10 may serve as thebase body 112 of the radiation cooler 40. In this context, the coveringbody 38 may be formed by silicon.

A specularly reflective surface 42 is formed between the radiationcooler 40 and the covering body 38. The specularly reflective surface 42may be formed as part of the radiation cooler 40 or as part of thecovering body 38. As a non-limiting embodiment, the specularlyreflective surface 42 may be secured by means of an adhesion layer (notillustrated) corresponding, as a non-limiting example, to the adhesionlayer 113 on the covering body 38. The adhesion layer may be formed bytitanium, if appropriate. The specularly reflective surface 42 may, as anon-limiting example, include silver or aluminum or be formed by silveror aluminum. The specularly reflective surface 42 may correspond to thesilver layer 114, as a non-limiting example.

As an alternative thereto, the specularly reflective surface 42 may beformed at a different layer of the optoelectronic component 10 or form adifferent layer of the optoelectronic component 10. As a non-limitingembodiment, the specularly reflective surface 42 may be formed betweenthe adhesion-medium layer 36 and the covering body 38, between theencapsulation layer 24 and the adhesion-medium layer 36, between thesecond electrode 23 and the encapsulation layer 24, between the organicfunctional layer structure 22 and the second electrode 23, between thefirst electrode 20 and the organic functional layer structure 22,between the carrier 12 and the first electrode 20, or on an underside ofthe carrier 12, said underside being shown in FIG. 7. As an alternativethereto, the covering body 38 may have a surface that serves as aspecularly reflective surface 42, or the second electrode 23 or thefirst electrode 20 may have a surface that serves as a specularlyreflective surface 42, or the carrier 12 may have a surface that servesas a specularly reflective surface 42.

A cooling layer structure of the radiation cooler 40 may correspond, asa non-limiting example, to the cooling layer structure of theconventional radiation cooler 110. In particular, the cooling layerstructure of the radiation cooler 40 includes a plurality of layersstacked one above another. The layers are formed alternately by silicondioxide and hafnium oxide. Layers including titanium dioxide may beformed as an alternative to the layers including hafnium oxide.

The different layers have different refractive indices and differentthicknesses. In this case, the cooling layer structure of the radiationcooler 40 includes at least the first thickness region 116, in which theindividual layers have thicknesses of between 100 nm and 1000 nm, andthe second thickness region 118, in which the individual layers havethicknesses of between 1 and 100 nm. The second thickness region 118 isformed above the mirror layer 114 and the first thickness region 116 isformed above the second thickness region 118.

FIG. 8 shows one embodiment of an optoelectronic assembly 1 which may,as a non-limiting example, largely correspond to the optoelectronicassembly 1 explained with reference to FIG. 7. In particular, theoptoelectronic component 10 may correspond to the optoelectroniccomponent 10 explained with reference to FIG. 7. Alternatively oradditionally, the radiation cooler 40 may correspond to the radiationcooler 40 explained with reference to FIG. 7.

The optoelectronic component 10 is preferably formed as a top emitter.As an alternative thereto, however, the optoelectronic component 10 mayalso be formed as a bottom emitter or as a component that emits on bothsides.

The radiation cooler 40 is coupled to the optoelectronic component 10with direct physical contact. The radiation cooler 40 is arranged on theexterior of the optoelectronic component 10. The radiation cooler 40 issecured to the carrier 12 with direct physical contact.

The specularly reflective surface 42 is formed between the carrier 12and the radiation cooler 40. As an alternative thereto, the specularlyreflective surface 42, as explained with reference to FIG. 7, may beformed at a different layer of the optoelectronic component 10 or formsaid different layer.

FIG. 9 shows one embodiment of an optoelectronic assembly 1 which may,as a non-limiting example, largely correspond to the optoelectronicassembly 1 explained with reference to FIG. 7. In particular, theoptoelectronic component 10 may correspond to the optoelectroniccomponent 10 explained with reference to FIG. 7. Alternatively oradditionally, the radiation cooler 40 may correspond to the radiationcooler 40 explained with reference to FIG. 7.

The optoelectronic component 10 is preferably formed as a bottomemitter. As an alternative thereto, however, the optoelectroniccomponent 10 may also be formed as a top emitter or as a component thatemits on both sides.

The radiation cooler 40 is coupled to the optoelectronic component 10with direct physical contact. The radiation cooler 40 is integrated intoa layer structure of the optoelectronic component 10. The radiationcooler 40 is formed between the encapsulation layer 24 and theadhesion-medium layer 36. As an alternative thereto, the radiationcooler 40 may be formed between the adhesion-medium layer 36 and thecovering body 38, between the second electrode 23 and the encapsulationlayer 24, or between the carrier 12 and the first electrode 20.Optionally, the adhesion-medium layer 36 and the covering body 38 may bedispensed with, with the result that the radiation cooler 40 serves as acovering for the optoelectronic component 10.

The specularly reflective surface 42 is formed between the encapsulationlayer 24 and the radiation cooler 40. As an alternative thereto, thespecularly reflective surface 42, as explained with reference to FIG. 7,may be formed at a different layer of the optoelectronic component 10 orform said different layer.

FIG. 10 shows one embodiment of an optoelectronic assembly 1 which may,as a non-limiting example, largely correspond to the optoelectronicassembly 1 explained with reference to FIG. 7. In particular, theoptoelectronic component 10 may correspond to the optoelectroniccomponent 10 explained with reference to FIG. 7. Alternatively oradditionally, the radiation cooler 40 may correspond to the radiationcooler 40 explained with reference to FIG. 7.

The optoelectronic component 10 is preferably formed as a bottomemitter. As an alternative thereto, however, the optoelectroniccomponent 10 may also be formed as a top emitter or as a component thatemits on both sides.

The radiation cooler 40 is coupled to the optoelectronic component 10with direct physical contact. The radiation cooler 40 is integrated intoa layer structure of the optoelectronic component 10. The radiationcooler 40 is formed as an encapsulation layer 24 of the optoelectroniccomponent 10. In other words, the radiation cooler 40 forms theencapsulation layer 24. The radiation cooler 40 is in direct physicalcontact with the second electrode 23. Optionally, the adhesion-mediumlayer 36 and the covering body 38 may be dispensed with. In this case,the radiation cooler 40 performs the function of cooling, encapsulationand covering of the optoelectronic component 10.

The specularly reflective surface 42 is formed between the secondelectrode 23 and the radiation cooler 40. As a non-limiting example, thespecularly reflective surface 42 may be formed by the second electrode23. As an alternative thereto, the specularly reflective surface 42, asexplained with reference to FIG. 7, may be formed at a different layerof the optoelectronic component 10 or form said different layer.

FIG. 11 shows a flow diagram of a method for producing an optoelectronicassembly, as a non-limiting example, the optoelectronic assembly 1explained above.

In a step S2, an optoelectronic component is formed. As a non-limitingembodiment, the optoelectronic component 10 explained above is formed.

In a step S4, a radiation cooler is coupled to the optoelectroniccomponent. As a non-limiting embodiment, the radiation cooler 40explained above is coupled to the optoelectronic component 10.

Steps S2 and S4 may be carried out in a manner configured successively,such that firstly the optoelectronic component 10 is formed and then theradiation cooler 40 is coupled to the optoelectronic component. In thiscase, the radiation cooler 40 may firstly be completed and then becoupled to the optoelectronic component 10. This has the advantage thatthe process of forming the radiation cooler 40 does not lead to anylimitation in the process implementation when forming the optoelectroniccomponent 10. As an alternative thereto, the radiation cooler 40 may beformed directly on the optoelectronic component 10.

As an alternative thereto, steps S2 and S4 may be implemented in thesame period of time, as a non-limiting example, if the radiation cooler40 is integrated in the optoelectronic component 10. As a non-limitingembodiment the radiation cooler 40 may be formed as a layer of theoptoelectronic component 10. In this case, the radiation cooler 40 mayfirstly be completed and be integrated as a finished layer into theoptoelectronic component 10, or the radiation cooler 40 may be formed onan already completed layer of the optoelectronic component 10.

The layers of the radiation cooler 40, as a non-limiting example, in thecase of thin layers, in particular in the second thickness region 118,may be formed by means of ALD, CVD, sputtering, electron beam or similarmethods and, as a non-limiting example, in the case of thick layers, inparticular in the first thickness region 116, may be formed by means ofCVD, sputtering, electron beam or similar methods.

FIG. 12 shows a flow diagram of a method for producing an optoelectronicassembly, as a non-limiting example, the optoelectronic assembly 1explained above.

A step S6 involves providing a carrier, a covering body and/or a heatsink. As a non-limiting embodiment, the carrier 12, the covering body 38and/or the heat sink explained above are/is provided. The fact that thecarrier 12, the covering body 38 and/or the heat sink are/is providedmay mean, as a non-limiting example, that the carrier 12, the coveringbody 38 and/or the heat sink are/is formed.

In a step S8, the radiation cooler is arranged or formed on the carrier,the covering body and/or the heat sink. By way of a non-limitingembodiment, the radiation cooler 40 is arranged or formed on the carrier12, the covering body 38 and/or the heat sink. In particular, the layersof the radiation cooler 40 may be formed, as a non-limiting example,deposited, on the carrier 12, the covering body 38 and/or the heat sink.

In a step S10, which may be carried out, as a non-limiting example,before or after steps S6 and S8, the rest of the optoelectroniccomponent 10 is formed. By way of a non-limiting embodiment, the organicfunctional layer structure 22 of the optoelectronic component 10, theelectrodes 20, 23 and/or the encapsulation layer structure 24 areformed.

In a step S12, the carrier, the covering body or the heat sink coupledto the radiation cooler is arranged on the rest of the optoelectroniccomponent. By way of a non-limiting embodiment, the carrier 12, thecovering body 38 or the heat sink respectively having the radiationcooler 40 is arranged in direct physical contact on the rest of theoptoelectronic component 10.

Forming or arranging the radiation cooler 40 independently of the restof the optoelectronic component 10, in particular independently of theorganic functional layer structure 22 of the optoelectronic component10, has the effect that the temperature sensitivity of the organicfunctional layer structure 22 need not be taken into account whenforming or arranging the radiation cooler 40. This is advantageous inparticular if the layers of the radiation cooler 40 are formed by meansof methods in which basically high temperatures, in particular above100° C., are used and/or are advantageous.

The invention is not restricted to the embodiments indicated. By way ofa non-limiting embodiment, the optoelectronic assembly 1 may include aplurality of optoelectronic components 10 and/or a plurality ofradiation coolers 40. Alternatively or additionally, the optoelectroniccomponent 10 may be segmented. Furthermore, in the case of theoptoelectronic assemblies 1 explained with reference to FIGS. 7 to 10, aheat sink may be arranged as an alternative or in addition to one of thelayers and/or bodies illustrated. If appropriate, the heat sink ispreferably in direct physical contact with the radiation cooler 40.

While the invention has been particularly shown and described withreference to specific embodiments, it should be understood by thoseskilled in the art that various changed in form and detail may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

LIST OF REFERENCE SIGNS

-   Optoelectronic assembly 1-   Optoelectronic component 10-   Carrier 12-   First electrode layer 14-   First contact section 16-   Second contact section 18-   First electrode 20-   Organic functional layer structure 22-   Second electrode 23-   Encapsulation layer structure 24-   First contact region 32-   Second contact region 34-   Adhesion-medium layer 36-   Covering body 38-   Radiation cooler 40-   Specularly reflective surface 42-   Emission spectrum of sun 80-   Absorption spectrum of radiation cooler 82-   Atmospheric transmissivity 84-   Emission spectrum of radiation cooler 86-   Solar energy 90-   Ambient temperature 92-   Temperature of radiation cooler 94-   Temperature of black color 96-   Temperature of aluminum body 98-   Building cooler 100-   Frame 102-   Membrane 104-   Trough 106-   Plastics body 108-   Conventional radiation cooler 110-   Base body 112-   Adhesion layer 113-   Mirror layer 114-   First thickness region 116-   Second thickness region 118-   Emission/absorption EM/AB-   Wavelength LAM-   Temperature T-   Solar energy SI-   Time of day TIME

1. An optoelectronic assembly comprising: an optoelectronic componentcomprising: a first electrode; an organic functional layer structurearranged above the first electrode; a second electrode arranged abovethe organic functional layer structure; and a specularly reflectivesurface, wherein the second electrode includes or forms the specularlyreflective surface; and a radiation cooler in physical contact with theoptoelectronic component.
 2. The optoelectronic assembly as claimed inclaim 1, wherein the radiation cooler is arranged on the exterior of theoptoelectronic component.
 3. The optoelectronic assembly as claimed inclaim 2, wherein the optoelectronic component comprises a covering body,which closes off the optoelectronic component toward the outside, andthe radiation cooler is arranged on the covering body, and/or theoptoelectronic component comprises a carrier, which closes off theoptoelectronic component toward the outside, and the radiation cooler isarranged on the carrier, and/or the optoelectronic component comprises aheat sink, which closes off the optoelectronic component toward theoutside, and the radiation cooler is arranged on the heat sink.
 4. Theoptoelectronic assembly as claimed in claim 1, wherein the radiationcooler is integrated into a layer structure of the optoelectroniccomponent.
 5. The optoelectronic assembly as claimed in claim 1, whereinthe radiation cooler is in direct physical contact with an electrode ofthe optoelectronic component.
 6. The optoelectronic assembly as claimedin claim 1, wherein the optoelectronic component is an organicoptoelectronic component implemented as a solar cell or an OLED.
 7. Theoptoelectronic assembly as claimed in claim 1, wherein the radiationcooler comprises a layer structure comprising a plurality of differentlayers, wherein the layers have different refractive indices and atleast partly different layer thicknesses, wherein in a first thicknessregion of the layer structure layers are formed which have thicknesseswhich are greater than the thicknesses of layers in a second thicknessregion.
 8. The optoelectronic assembly as claimed in claim 9, whereinthe thicknesses in the first thickness region are in a range from 100 to1000 nm and/or wherein the thicknesses in the second thickness regionare in a range from 1 to 100 nm.
 9. The optoelectronic assembly asclaimed in claim 9, wherein the layers in part comprise or are formed bysilicon dioxide and in part comprise or are formed by hafnium oxide ortitanium dioxide.
 10. An optoelectronic assembly comprising: anoptoelectronic component comprising: a first electrode; an organicfunctional layer structure arranged above the first electrode; and asecond electrode arranged above the organic functional layer structure;and a radiation cooler in contact with the optoelectronic component,wherein the radiation cooler is arranged on a side of the organicfunctional layer structure opposite of the second electrode, and whereinthe second electrode is reflective and configured in such a way thatradiation leaves the of electronic assembly exclusively through theradiation cooler.
 11. The optoelectronic assembly as claimed in claim10, wherein the radiation cooler is formed as an encapsulation of theoptoelectronic component.
 12. The optoelectronic assembly as claimed inclaim 10, wherein the optoelectronic component is an organicoptoelectronic component implemented as a solar cell or an OLED.
 13. Theoptoelectronic assembly as claimed in claim 10, wherein the radiationcooler is arranged on the side of the organic functional layer structurefacing away from the second electrode.
 14. The optoelectronic assemblyas claimed in claim 10, wherein the first electrode is formed astranslucent or transparent.
 15. An optoelectronic assembly comprising:an optoelectronic component comprising: a first electrode; an organicfunctional layer structure arranged above the first electrode; a secondelectrode arranged above the organic functional layer structure; and areflective surface; and a radiation cooler in contact with theoptoelectronic component.
 16. The optoelectronic assembly as claimed inclaim 15, wherein the optoelectronic component is an organicoptoelectronic component implemented as a solar cell or an OLED.
 17. Theoptoelectronic assembly as claimed in claim 15, wherein the radiationcooler is arranged on the side of the organic functional layer structurefacing away from the reflective surface.
 18. The optoelectronic assemblyas claimed in claim 15, wherein the radiation cooler is arranged on theside of the organic functional layer structure facing towards thereflective surface.
 19. The optoelectronic assembly as claimed in claim15, wherein the optoelectronic component comprises a covering body,and/or the optoelectronic component comprises a carrier, and/or theoptoelectronic component comprises a heat sink.
 20. The optoelectronicassembly as claimed in claim 19, wherein the covering body, the carrier,the heat sink, the first electrode and/or the second electrode comprisesor forms the reflective surface.